SPLBxxx

Unmounted Laser Bars 20 W cw ... 100 W qcw SPL Bxxx Features Unmounted monolithic linear array High efficiency MOVPE-grown quantum well structure Highly reliable strained layer InGa(Al)As/GaAs material Standard wavelength selection is ± 3 nm, others on request Solderable p- and n-side metalization Applications Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...) Direct industrial applications (soldering, surface treatment, marking, ...) Heating, illumination Medical and printing application Type SPL BG81 SPL BG94 SPL BG98 SPL BS79 SPL BS81 SPL BS94 Power 25 W .. 30 W cw Wavelength1) 808 nm 940 nm 980 nm 794 nm 808 nm 940 nm Ordering Code Q62702-P1654 Q62702-P1733 Q62702-P3259 Q62702-P3257 Q62702-P1719 Q62702-P3258 50 W .. 100 W qcw 1) Other wavelengths in the range of 780 ... 980 nm are available on request. Semiconductor Group 1/2 1997-11-24 SPL Bxxx Characterictics (TA = 25 °C) Parameter Symbol Wavelength Typical Values Unit BGxx Recommended output power 1) Catastrophic optical damage limit 1), 2) Threshold current 2) BSxx 50 ... 100 qcw > 110 > 200 < 17 > 0.85 > 35 45° × 12° 38° × 12° 804 935 <4 W W A W/A % Deg. nm nm % µm µm µm mm µm µm Popt PCOD Ith η 1) – 20 ... 30 cw ≤ 808nm > 80 ≥ 940nm > 130 – – – ≤ 808nm ≥ 940nm ≤ 808nm 802 ≥ 940nm 934 – – – – – – – 50 200 (20 × 3) 400 10.0 25 < 11 Differential quantum efficiency 2) Total conversion efficiency Beam divergence (FWHM) Standard pulse wavelength 2), 3) Spectral width (FWHM) Fill factor...