SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4165, Rev. B
SPM6G060-120D
Three-Phase IGBT BRIDGE, With Gate Driver ...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4165, Rev. B
SPM6G060-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown
Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC
O
BVCES IC ICM VGE IGES ICES
1200 -
-
60 40 100 +/-20 +/- 200
V A A V nA
TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter
Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate
Voltage Collector Current
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VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC Collector to Emitter Saturation
Voltage, IC = 40A, VGE = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 125 C
O O
1 10 VCE(SAT) 1.9 2.1 RθJC Tjmax Tjmax -40 -55 2.3 0.6 150 150
o
mA mA V
C/W
o o
C C
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SPM6G060-120D SENSITRON TECHNICAL DATA Datasheet 4165, Rev. B
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115
o
C
10mV/oC
o
C
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