SPM6M060-010D

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A SPM6M060-010D Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS www.DataSheet4U.com SYMBOL MIN TYP MA X UNIT BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V GS(TH) O 100 - V ID - - 60 50 100 A A V nA V Gate to Source Voltage Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1mA Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25oC VCS= 480 V, VGE=0V Ti=125oC On-State Resistance, ID = 10A, VGS = 15V, Input Capacitance Output Capacitance Reverse Transfer Cap. VCS = 25 V, VGE = 0 V, f = 1 MHz Maximum Thermal Resistance TC = 25 C O - - +/-20 +/- 100 2 - 4 ICSS 250 500 RDSon Ciss Coss Cres RθJC 0.012 3950 850 250 0.7 o µA µA V pF 0.015 C/W 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX 631 242 9798 World Wide Web Site - http://www.sensitron.com E-mail Address - [email protected] SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Gate Driver PARAMETER Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Threshol...