SPN166T06

SPN166T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN CONFIGURATION TO-220 TO-220F PPAK 5x6 PART MARKING 2020/05/11 Ver 3 Page 1 SPN166T06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN166T06T220TGB TO-220-3L SPN166T06T220FTGB TO-220F-3L SPN166T06DN8RGB PPAK5x6-8L ※ SPN166T06T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T06T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T06DN8RGB : Tape&Reel ; Pb – Free ; Halo...