SPN180T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field eff...
SPN180T10
N-Channel Enhancement Mode
MOSFET
DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
FEATURES 100V/180A, RDS(ON)=3.7mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L and TO-263-2L package design
PIN CONFIGURATION TO-220-3L
TO-263-2L
PART MARKING
2020/05/13 Ver 4
Page 1
SPN180T10
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN180T10T220TGB
TO-220-3L
SPN180T10T262RGB
TO-263-2L
※ SPN180T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN180T10T262RGB : Tape&Reel ; Pb–Free ; Halogen - Free
Part Marking
SPN180T10 SPN180T10
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate –Source
Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=70℃
VGSS ID IDM
Avalanche Energy, Single Pulse @ L=0.1...