SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field e...
SPN3006
N-Channel Enhancement Mode
MOSFET
DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS High Frequency Synchronous Buck Converter DC/DC Power System Load Switch
FEATURES
30V/80A,RDS(ON)=4.7mΩ@VGS=10V 30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC current
capability TO-252-2L/TO-251S-3L package design
PIN CONFIGURATION TO-252-2L
TO-251S-3L
PART MARKING
2020/04/20 Ver 6
Page 1
SPN3006
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN3006ST251TGB
TO-251S-3L
SPN3006T252RGB
TO-252-2L
※ SPN3006T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN3006ST251TGB: Tube ; Pb–Free; Halogen– Free
Part Marking
SPN3006 SPN3006
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate –Source
Voltage Continuous Drain Current Pulsed Drain Current
TA=25℃ TA=100℃
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage T...