SPN340T06

SPN340T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN340T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.. FEATURES  60V/340A, RDS(ON)=1.9mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  Enhanced Avalanche Ruggedness  TO-220-3L package design APPLICATIONS  DC/DC Converter  Hard Switching and High Speed Circuit  Synchronous Buck Converter  Power Tools  UPS  Motor Control PIN CONFIGURATION TO-220-3L PART MARKING 2020/05/11 Ver 2 Page 1 SPN340T06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN340T06T220TGB TO-220-3L ※ SPN340T060T220TGB: Tube ; Pb – Free; Halogen – Free Part Marking SPN340T06 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Continuous Drain Current(Package Limited) TC=25℃ TC=70℃ TC=25℃ Pulsed Drain Current Power Dissipation Avalanche Energy with Single Pu...