SPN68T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN68T10 is the N-Channel enhancement mode power field effec...
SPN68T10
N-Channel Enhancement Mode
MOSFET
DESCRIPTION The SPN68T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES 100V/68A,RDS(ON)=14mΩ@VGS=10V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L and TO-252-2L package design
PIN CONFIGURATION TO-220-3L
TO-252-2L
PART MARKING
2020/04/30 Ver 2
Page 1
SPN68T10
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN68T10T220TGB
TO-220-3L
SPN68T10T252RGB
TO-252-2L
※ SPN68T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN68T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate –Source
Voltage
Continuous Drain Current(Silicon Limited) Pulsed Drain Current
TC=25℃ TC=70℃
Power Dissipation@ TC=25℃
Avalanche Energy with Single Pulse ( Tj=25℃,...