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SPN8454 Datasheet

Part Number SPN8454
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN8454 DatasheetSPN8454 Datasheet (PDF)

SPN8454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Syn.

  SPN8454   SPN8454






Part Number SPN8457
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN8454 DatasheetSPN8457 Datasheet (PDF)

SPN8457 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8457 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small.

  SPN8454   SPN8454







N-Channel MOSFET

SPN8454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  150V/2A,RDS(ON)=350mΩ@VGS=10V  150V/1A,RDS(ON)=400mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-223 package design PIN CONFIGURATION(SOT– 223) PART MARKING 2022/09/01 Ver 4 Page 1 SPN8454 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8454S22RGB SOT-223 ※ SPN8454S22RGB : Pb – Free ; Halogen – Free Part Marking 8454 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current Power Dissipation TC=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient (steady state) Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA .


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