SPN8618
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8618 is the N-Channel logic enhancement mode power field e...
SPN8618
N-Channel Enhancement Mode
MOSFET
DESCRIPTION The SPN8618 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8618 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS Powered System DC/DC Converter Load Switch
FEATURES 100V/10A, RDS(ON)=112mΩ@VGS=10V 100V/10A, RDS(ON)=130mΩ@VGS=4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current
capability PPAK3x3-8L package design
PIN CONFIGURATION (PPAK3x3-8L)
PART MARKING
2020/05/28 Ver 2
Page 1
SPN8618
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN8618DN8RGB
PPAK3x3-8L
※ SPN8618DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking SPN8618
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter Drain-Source
Voltage
Gate –Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Power Dissipation @ TA=25℃
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
TC=25℃ TC=70℃
Symbol VDSS VGSS
ID
IDM PD TJ TSTG RθJA
Typical ...