SPN8632 Datasheet


(PDF) SPN8632 Datasheet, Equivalent, N-Channel Enhancement Mode MOSFET

SPN8632
N-Channel Enhancement Mode MOSFET

DESCRIPTION The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES  30V/96A,RDS(ON)=4.2mΩ@VGS=10V  30V/96A,RDS(ON)=6mΩ@VGS=4.5V  Super high density cell design for extremely low
RDS (ON)  Exceptional on-resistance and maximum DC
current capability  PPAK3x3 package design

APPLICATIONS  MB/VGA/Vcore  POL Applications  SMPS 2nd SR
PIN CONFIGURATION(PPAK3x3-8L)

PART MARKING

2017/4/07 Ver 1

Page 1

SPN8632
N-Channel Enhancement Mode MOSFET

PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8

Symbol S S S G D D D D

ORDERING INFORMATION

Part Number

Package

SPN8632DN8RGB

PPAK3x3-8L

※ SPN

Manufacture Part Number Description PDF

SYNC POWER
SPN8632 N-Channel Enhancement Mode MOSFET
SPN8632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc
SPN8632




Alternate Search Terms
SPN8632 datasheet SPN8632 component SPN8632 integrated circuit SPN8632 schematic SPN8632 application note PN8632 N8632 8632 SPN863 SPN86 SPN8

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