SPN8832
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8832 is the N-Channel logic enhancement mode power field e...
SPN8832
N-Channel Enhancement Mode
MOSFET
DESCRIPTION
The SPN8832 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8832 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS
High Frequency Synchronous Buck Converter DC/DC Power System Load Switch
FEATURES
30V/163A,RDS(ON)=3.0mΩ@VGS=10V 30V/163A,RDS(ON)=4.0mΩ@VGS=4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC current
capability PPAK5x6-8L package design
PIN CONFIGURATION(PPAK5x6-8L)
PART MARKING
2020/05/21 Ver 2
Page 1
SPN8832
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN8832DN8RGB
PPAK5x6-8L
※ SPN8832DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking SPN8832
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter Drain-Source
Voltage Gate –Source
Voltage
Continuous Drain Current(Silicon Limited)
Pulsed Drain Current
TC=25℃ TC=100℃
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
TC=25℃
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Jun...