SPN8852
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8852 is the N-Channel logic enhancement mode power field e...
SPN8852
N-Channel Enhancement Mode
MOSFET
DESCRIPTION The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES 150V/4.1A,RDS(ON)=88mΩ@VGS=10V 150V/2A,RDS(ON)=100mΩ@VGS=4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability PPAK5x6-8L package design
PIN CONFIGURATION(PPAK5x6–8L)
PART MARKING
2020/03/10 Ver 2
Page 1
SPN8852
N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN8852DN8RGB
PPAK5x6-8L
※ SPN8852DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate –Source
Voltage Continuous Drain Current(TJ=150℃)
TA=25℃
Pulsed Drain Current
Avalanche Energy, Single Pulse (L=0.1mH , Tc=25℃)
Power Dissipation
TC=25℃ TA=25℃
Operating Junction Temperature
Storage Temper...