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SPP100N08S2L-07 Datasheet

Part Number SPP100N08S2L-07
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPP100N08S2L-07 DatasheetSPP100N08S2L-07 Datasheet (PDF)

www.DataSheet4U.com SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 75 6.5 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6045 Q67060-S6047 Marking PN08L07 PN08L07 SPP100N08S2L-07 P- TO220 -3-1 SPB100N08S2L-07 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parame.

  SPP100N08S2L-07   SPP100N08S2L-07






OptiMOS Power-Transistor

www.DataSheet4U.com SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 75 6.5 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6045 Q67060-S6047 Marking PN08L07 PN08L07 SPP100N08S2L-07 P- TO220 -3-1 SPB100N08S2L-07 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=60V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(B.


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