Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPP15N60C3
·FEATURES ·Ultra low effective capacitances ·Low gat...
Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
SPP15N60C3
·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
15 9.4
45
PD
Total Dissipation
156
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.8 62
UNIT ℃/W ℃/W
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Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
SPP15N60C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS=±30V; ID=0.675mA
2.1
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=9.4A
250 280
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;TJ=25℃ TJ=125℃
ISD=15A, VGS = 0 V
±0.1 μA
1 100
μA
1.2
V
NOTICE: ISC reser...