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SPP17N80C3 Datasheet

Part Number SPP17N80C3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPP17N80C3 DatasheetSPP17N80C3 Datasheet (PDF)

isc N-Channel MOSFET Transistor SPP17N80C3,ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drai.

  SPP17N80C3   SPP17N80C3






Part Number SPP17N80C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet SPP17N80C3 DatasheetSPP17N80C3 Datasheet (PDF)

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPP17N80C3 800 V 0.29 Ω 88 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. acti.

  SPP17N80C3   SPP17N80C3







N-Channel MOSFET

isc N-Channel MOSFET Transistor SPP17N80C3,ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 227 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.55 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP17N80C3,ISPP17N80C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=11A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=800V; VGS= 0V VSD Diode forward voltage IF=17A; VGS = 0V MIN TYP MAX UNIT 800 V 2.1 3.9 V 0.29 Ω 0.1 μA 25 μA 1.2 V NOTICE: ISC reserves the r.


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