SPP8835

SPP8835 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8835 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP8835 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  -30V/-30A, RDS(ON)=3.3mΩ@VGS=-10V  -30V/-20A, RDS(ON)=5.0mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK5x6-8L package design PIN CONFIGURATION PPAK5x6-8L PART MARKING 2020/05/20 Ver 2 Page 1 SPP8835 P-Channel Enhancement Mode MOSFET PPAK5x6-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPP8835DN8RGB PPAK5x6-8L ※ SPP8835DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPP8835 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=100℃ Avalanche Current Single Pulse Avalanche Energy Power Dissipation TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Ju...