SPW11N60C3

Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125°C Symbol ID Value 11 7 Unit A I D puls EAS 33 340 0.6 11 6 ±20 ±30 125 -55... +150 W °C 2003-09-17 A V/ns V mJ Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Page 1 VGS VGS Ptot T j , T stg Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 11 A, Tj = 125 °C SPW11N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalan...