SPW11N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances SPW11N80C3 Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.45 Ω 64 nC PG-TO247-3 CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type SPW11N80C3 Package PG-TO247-3 Marking 11N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=11 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M2.5 screws Rev. 2.91 page 1 Value 11 7.1 33 470 0.2 11 50 ±20 ±30 156 -55 ... 150 50 Unit A mJ A V/ns V W °C Ncm 2011-09-27 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt SPW11N80C3 Value 11 33 4 Unit A V/n...