SPW16N50C3

Final data SPW16N50C3 VDS @ Tjmax RDS(on) ID 560 0.28 16 P-TO247 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance V Ω A Type SPW16N50C3 Package P-TO247 Ordering Code Q67040-S4584 Marking 16N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 16 10 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 8 , VDD = 50 V I D puls EAS 48 460 0.64 16 6 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 16 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=16A, VDS=480V, T j=125°C A V/ns V W °C 2003-06-30 Gate source voltage VGS VGS Ptot T j , T stg Page 1 Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature 160 -55... +150 Final data SPW16N50C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, ID = 16 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source aval...