Final data
SPW47N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best ...
Final data
SPW47N60C2
Cool MOS™ Power Transistor
Feature New revolutionary high
voltage technology
Worldwide best RDS(on) in TO 247
Product Summary VDS RDS(on) ID 600 0.07 47
P-TO247
V Ω A
Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
Type SPW47N60C2
Package P-TO247
Ordering Code Q67040-S4323
Marking 47N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 47 30
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =10A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
94 1800 1 20 6 ±20 415 -55... +150 A V/ns V W °C mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =20A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =47A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C
Gate source
voltage Power dissipation, TC = 25°C Operating and storage temperature
Page 1
2002-10-07
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown
voltage
VGS =0V, ID =0.25mA
SPW47N60C2
Symbol min. RthJC RthJA Tsold -
Values typ. max. 0.3 62 3.33 260
...