www.DataSheet.co.kr
SQ3427EEV
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT S...
www.DataSheet.co.kr
SQ3427EEV
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
TSOP-6 Top V iew
1 6
FEATURES
- 60 0.082 0.115 - 5.5 Single
(1, 2, 5, 6) D
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power
MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Typical ESD Protection 800 V Compliant to RoHS Directive 2002/95/EC
3 mm
2
5
(3) G
3
4
2.85 mm Marking Code: 8Dxxx
(4) S P-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3427EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 60 ± 20 - 5.5 - 3.2 - 6.3 - 22 - 21 22 5 1.6 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W
S11-2124-Rev. B, 07-Nov-11
1
Do...