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SQ3456BEV
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
www.DataSheet.co.kr
SQ3456BEV
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TSOP-6 Top V iew
1 6
FEATURES
30 0.035 0.052 7.8 Single
(1, 2, 5, 6) D
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power
MOSFET Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedc
3 mm
2
5
(3) G
3 4
2.85 mm Marking Code: 8Lxxx
(4) S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3456BEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 30 ± 20 7.8 4.5 5 31 10 5 4 1.3 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 38 UNIT °C/W
Document Number: 67934 S11-0959-Rev. A, 06-Jun-11
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