SQJ200EP

www.vishay.com SQJ200EP Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFETs PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration 20 0.0088 0.0124 20 Dual N 20 0.0037 0.0050 60 Package PowerPAK SO-8L Dual Asymmetric PowerPAK® SO-8L Dual Asymmetric FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 6.15 mm 1 Top View 5.13 mm D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) e, f TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 20 20 20 20a 80 22 24.2 27 9 ± 20 -55 to +175 260 20 60 50 44 180 40 80 48 16 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c SYMBOL RthJA RthJC N-CHANNEL 1 85 5.5 N-CHANNEL 2 85 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤...