www.vishay.com
SQJ407EP
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 m...
www.vishay.com
SQJ407EP
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C
MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
D
1 2S 3S 4S G
Bottom View
FEATURES TrenchFET® power
MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration
Package
-30 0.0044 0.0071
-60 Single PowerPAK SO-8L
G
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b
TC = 25 °C a TC = 125 °C
VDS VGS
ID
IS IDM
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 mH
IAS EAS
Maximum power dissipation b
Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e
TC = 25 °C TC = 125 °C
PD TJ, Tstg
LIMIT -30 ± 20 -60 -56 -60 -155 -41 84 68 22
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drain)
PCB mountc
SYMBOL RthJA RthJC
LIMIT 68 2.2
UNIT °C/W
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed c...