www.vishay.com
SQJ884EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK® SO-8L Single
40 0.006 0.008
32 Single
D
FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
6.15 mm
5.13 mm
4 G
3 S
2 S
1 S
D
ORDERING INFORMATION
Package Lead (Pb)-free a.
Automotive N-Channel MOSFET
www.vishay.com
SQJ884EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK® SO-8L Single
40 0.006 0.008
32 Single
D
FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
6.15 mm
5.13 mm
4 G
3 S
2 S
1 S
D
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G
S N-Channel MOSFET
PowerPAK SO-8L SQJ884EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
TC = 25 °C TC = 125 °C
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operat.