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SQJ884EP Datasheet

Part Number SQJ884EP
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQJ884EP DatasheetSQJ884EP Datasheet (PDF)

www.vishay.com SQJ884EP Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single 40 0.006 0.008 32 Single D FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 6.15 mm 5.13 mm 4 G 3 S 2 S 1 S D ORDERING INFORMATION Package Lead (Pb)-free a.

  SQJ884EP   SQJ884EP






Automotive N-Channel MOSFET

www.vishay.com SQJ884EP Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single 40 0.006 0.008 32 Single D FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 6.15 mm 5.13 mm 4 G 3 S 2 S 1 S D ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G S N-Channel MOSFET PowerPAK SO-8L SQJ884EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operat.


2017-05-06 : P32FG15SL    TIP117    TIP117F    TIP117    TIP116    TIP115    TIP115    TIP112    TIP112    TIP110   


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