SQJ886EP

www.vishay.com SQJ886EP Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single 40 0.0045 0.0055 60 Single D FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 6.15 mm 5.13 mm 4 G 3 S 2 S 1 S D ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G S N-Channel MOSFET PowerPAK SO-8L SQJ886EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg LIMIT 40 ± 20 60 45 50 240 36 64 55 18 - 55 to + 175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mountb RthJA 70 °C/W RthJC 2.7 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc?73...