SQJ962EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
SQJ962EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration 60 0.060 0.080 8 Dual
FEATURES
TrenchFET® Power
MOSFET AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® SO-8L Dual
D1
m 5m 6.1
D
2
5.1 3m m
D2
D
1
G1
G2
4 G2 S2
3 2 G1
1 S1
Bottom View
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ962EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 8 8 8 32 10 5 25 8 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 85 6 UNIT °C/W
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay....