SQJ970EP

SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration 40 0.020 0.028 8 Dual FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8L Dual D1 D2 m 5m 6.1 D 2 5.1 3m m D G1 G2 1 G2 4 S2 3 2 G1 S1 1 S1 Bottom View N-Channel MOSFET S2 N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ970EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 8 8 8 32 28 39 48 16 - 55 to + 175 260 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 85 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification on...