www.vishay.com
SQJA66EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
D
1 2S 3S 4S G
Bottom View
FEATURES • TrenchFET® Gen IV Power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
60 0.0030
75 Single
G
N-Channel MOSFET S
ORDERING INFORMATION
Packag.
Automotive N-Channel MOSFET
www.vishay.com
SQJA66EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
D
1 2S 3S 4S G
Bottom View
FEATURES • TrenchFET® Gen IV Power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
60 0.0030
75 Single
G
N-Channel MOSFET S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8L
SQJA66EP (for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage Continuous drain current
VGS
TC = 25 °C a TC = 125 °C
ID
Continuous source current (diode conduction)
IS
Pulsed drain current b
IDM
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C TC = 125 °C
PD
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
TJ, Tstg
LIMIT 60 ± 20 75 56 62 300 28 39.2 68 22
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drain)
PCB mount c
SYMBOL RthJA RthJC
LIMIT 68 2.2
UNIT °C/W
Notes
a. Package limited b. Pulse test; pulse width 300 μs, duty cycle 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder p.