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SQJA86EP Datasheet

Part Number SQJA86EP
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQJA86EP DatasheetSQJA86EP Datasheet (PDF)

www.vishay.com SQJA86EP Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration Package 80 0.0190 0.0240 30 Single PowerPAK.

  SQJA86EP   SQJA86EP






Automotive N-Channel MOSFET

www.vishay.com SQJA86EP Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration Package 80 0.0190 0.0240 30 Single PowerPAK SO-8L G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C a TC = 125 °C L = 0.1 mH TC = 25 °C.


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