www.vishay.com
SQJB80EP
Vishay Siliconix
Automotive Dual N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Dual
6.1...
www.vishay.com
SQJB80EP
Vishay Siliconix
Automotive Dual N-Channel 80 V (D-S) 175 °C
MOSFET
PowerPAK® SO-8L Dual
6.15 mm
1 Top View
5.13 mm
D1
D2
1 2 S1 3 G1 4 S2 G2
Bottom View
FEATURES TrenchFET® power
MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package
80 0.0190 0.0240
30 Dual PowerPAK SO-8L
G1 G2
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage
VDS
Gate-source
voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range Soldering recommendations (peak temperature) ...