SQJQ402E

www.vishay.com SQJQ402E Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration PowerPAK® 8x8L Single 1.9 mm D 40 0.0017 0.0020 200 Single 8.1 mm FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Thin 1.9 mm height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D D 8 mm G 1 G 2 S S3 Top View 4 S 4 S S3 2 S Bottom View 1 G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK 8x8L SQJQ402E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °C a TC = 125 °C VGS ID Continuous Source Current (Diode Conduction) Pulsed Drain Current b IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg LIMIT 40 ± 20 200 127 200 300 85 361 150 50 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 50 °C/W RthJC 1 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr4 m...