www.vishay.com
SQJQ410EL
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(...
www.vishay.com
SQJQ410EL
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package
100 0.0034 0.0040
135 Single PowerPAK 8 x 8L
PowerPAK® 8 x 8L Single
FEATURES TrenchFET® power
MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Fully lead (Pb)-free device Thin 1.9 mm height Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
D
8 mm
1 Top View
8.1 mm
1 2G 3S 4S S
Bottom View
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction)
TC = 25 °C TC = 125 °C
Pulsed Drain Current a
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C TC = 125 °C
Operating Junction and Stora...
