SQJQ480E

www.vishay.com SQJQ480E Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package 80 0.003 150 Single PowerPAK 8 x 8L PowerPAK® 8 x 8L Single FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Fully lead (Pb)-free device Thin 1.9 mm height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D D 8 mm 1 Top View 8.1 mm 1 2G 3S 4S S Bottom View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode conduction) Pulsed Drain Current a IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 125 °C PD Operating Junction and Storage Te...