www.vishay.com
SQM100N10-10
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-263
100 0.0105 0.0120
100 Single
D
FEATURES • TrenchFET® Power MOSFET
• Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
G
G DS Top View
S N-Channel MOSFET
ORDERING INFO.
Automotive N-Channel MOSFET
www.vishay.com
SQM100N10-10
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-263
100 0.0105 0.0120
100 Single
D
FEATURES • TrenchFET® Power MOSFET
• Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
G
G DS Top View
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-263 SQM100N10-10-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current
TC = 25 °Ca TC = 125 °C
VGS ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 100 ± 20 100 70 100 400 75 280 375 125
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 40 0.4
UNIT V
A
mJ W °C
UNIT °C/W
S12-1845-Rev. B, 30-Jul-12
1
Document Number: 67027
For technical questions.