SQM110N05-06L

www.vishay.com SQM110N05-06L Vishay Siliconix Automotive N-Channel 55 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-263 55 0.006 0.010 110 Single D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC G G DS Top View S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 SQM110N05-06L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 55 ± 20 110 64 120 443 61 186 157 52 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJC LIMIT 40 0.95 UNIT V A mJ W °C UNIT °C/W S11-2035-Rev. B, 17-Oct-11 1 Document Number: 68838 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NO...