www.vishay.com
SQM120N10-3m8
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) ...
www.vishay.com
SQM120N10-3m8
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
TO-263
100 0.0038
120 Single
D
FEATURES TrenchFET® Power
MOSFET
Package with Low Thermal Resistance AEC-Q101 Qualifiedd
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
G
G DS Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel
MOSFET
TO-263 SQM120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Te...
