www.vishay.com
SQM40031EL
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
TO-263
S
G
Top View
S D G
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package
D P-Channel MOSFET
-40 0.00300 0.00380
-120 Single TO-263
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?.
Automotive P-Channel MOSFET
www.vishay.com
SQM40031EL
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
TO-263
S
G
Top View
S D G
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package
D P-Channel MOSFET
-40 0.00300 0.00380
-120 Single TO-263
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a Continuous Source Current (Diode conduction) a
TC = 25 °C TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
VDS VGS
ID
IS .