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SQM40N10-30
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
www.vishay.com
SQM40N10-30
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 6 V ID (A) Configuration Package
TO-263
100 0.030 0.034
40 Single TO-263
D
FEATURES TrenchFET® power
MOSFET
Package with low thermal resistance AEC-Q101 qualified d
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
G
Top View
S D G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 100 ± 20 40 22 60 155 40 80 107 35
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 40 1.4
UNIT V
A
mJ W °C
UNIT °C/W
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 64716
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE...