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SQM50N04-4m1 Datasheet

Part Number SQM50N04-4m1
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQM50N04-4m1 DatasheetSQM50N04-4m1 Datasheet (PDF)

www.vishay.com SQM50N04-4m1 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-263 40 0.0041 50 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D D GS Top View G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halo.

  SQM50N04-4m1   SQM50N04-4m1






Part Number SQM50N04-4m0L
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQM50N04-4m1 DatasheetSQM50N04-4m0L Datasheet (PDF)

www.vishay.com SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-263 40 0.0040 0.0055 50 Single D FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G G DS Top View S N-Channel MOSFET ORDERING INFORM.

  SQM50N04-4m1   SQM50N04-4m1







Automotive N-Channel MOSFET

www.vishay.com SQM50N04-4m1 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-263 40 0.0041 50 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D D GS Top View G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 SQM50N04-4m1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 50 50 50 200 60 180 150 50 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 40 1 UNIT V A mJ W °C UNIT °C/W S12-0568-Rev. A, 26-Mar-12 1 Document Number: 63770 For technical questions, contact: [email protected] THI.


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