www.vishay.com
SQP120P06-6m7L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
TO-220AB
Top View
S D ...
www.vishay.com
SQP120P06-6m7L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C
MOSFET
TO-220AB
Top View
S D G
FEATURES TrenchFET® power
MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package
-60 0.0067 0.0088
-120 Single TO-220AB
G
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current a
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
TC = 25 °C a TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT -60 ± 20 -120 -87 -120 -480 -80 320 300 100
-55 to +175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient Junction-to-case (drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing
PCB mount c
SYMBOL RthJA RthJC
LIMIT 40 0.5
UNIT °C/W
S18-0554-Rev. A, 04-Jun-2018
1
Document Number: 77806
For technical questions, contact:
[email protected]
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