SQP90P06-07L

www.vishay.com SQP90P06-07L Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration TO-220AB -60 0.0067 0.0088 -120 Single FEATURES TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see S G Top View S D G ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D P-Channel MOSFET TO-220 SQP90P06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -60 ± 20 -120 -87 -120 -480 -80 320 300 100 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr-4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 40 0.5 UNIT °C/W S14-0585-Rev. A, 17-Mar-14 1 Document Number: 6266...