www.vishay.com
SQR97N06-6m3L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package
60 0.0063 0.0069
97 Single TO-252 Reverse Lead DPAK
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested • AEC-Q101 qualified d
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TO-252 Reverse Lead DPAK
D
.
Automotive N-Channel MOSFET
www.vishay.com
SQR97N06-6m3L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package
60 0.0063 0.0069
97 Single TO-252 Reverse Lead DPAK
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested • AEC-Q101 qualified d
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TO-252 Reverse Lead DPAK
D
SG
D
Drain connected to tab
D
G Top View
S Bottom View
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b
TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b
Operating Junction and Storage Temperature Rang.