www.vishay.com
SQS405EN
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PowerPAK® 1212-8 Single
D D8 D...
www.vishay.com
SQS405EN
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C
MOSFET
PowerPAK® 1212-8 Single
D D8 D7 D6 5
3.3 mm
1 Top View
3.3 mm
1 2S 3S 4S G
Bottom View
FEATURES TrenchFET® power
MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -4.5 V RDS(on) () at VGS = -2.5 V ID (A) Configuration Package
-12 0.020 0.026
-16 Single PowerPAK 1212-8
G
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current a
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range Soldering recommendations (peak temperature) e, f
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT -12 ±8 -16 -16 -16 -64 -19 18 39 13
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-ambient Junction-to-case (drain)
PCB mount c
RthJA
81
°C/W
RthJC
3.8
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1...