SQS405ENW

www.vishay.com SQS405ENW Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm 1 2S 3S 4S G Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Wettable flank terminals Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -4.5 V RDS(on) () at VGS = -2.5 V ID (A) Configuration Package -12 0.020 0.026 -16 Single PowerPAK 1212-8 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b TC = 25 °C TC = 125 °C ID IS IDM Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation b TC = 25 °C TC = 125 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) e, f TJ, Tstg LIMIT -12 ±8 -16 -16 -16 -64 -19 18 39 13 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-ambient Junction-to-case (drain) PCB mount c RthJA RthJC 81 3.8 Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Rework conditions: manual soldering with a soldering iron is not recomme...