SQS407ENW

www.vishay.com SQS407ENW Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PowerPAK® 1212-8W Single D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm Marking code: Q033 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package 1 4 3 S 2 S S G Bottom View -30 0.0108 0.0170 -16 Single PowerPAK 1212-8W FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) e, f TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -30 ± 20 -16 -16 -16 -64 -23 26.5 62.5 20 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL RthJA RthJC LIMIT 81 2.4 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.v...