www.vishay.com
SQS420EN
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A) Configuration
PowerPAK® 1212-8
20 0.0280 0.0320 0.0380
8 Single
D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
.
Automotive N-Channel MOSFET
www.vishay.com
SQS420EN
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A) Configuration
PowerPAK® 1212-8
20 0.0280 0.0320 0.0380
8 Single
D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Part Marking Code: Q011
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G
S N-Channel MOSFET
PowerPAK 1212-8 SQS420EN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 20 ±8 8 8 8 32 10 5 18 6
- 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mountc
RthJA
81
°C/W
RthJC
8.1
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material.