www.vishay.com
SQS462EN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on...
www.vishay.com
SQS462EN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
Package
60 0.063 0.082
8 Single PowerPAK 1212-8
FEATURES TrenchFET® power
MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® 1212-8 Single
D D8 D7 D6 5
D
3.3 mm
1 Top View
3.3 mm
1 2S 3S 4S G
Bottom View
G
N-Channel
MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
Continuous Drain Current a Continuous Source Current (Diode Conduction) a
TC = 25 °C TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 8 8 8 32 9 4 33 11
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 81 4.5
UNIT °C/W
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lea...
