www.vishay.com
SQS482EN
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on...
www.vishay.com
SQS482EN
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK® 1212-8
30 0.0085
0.01 16 Single
D
FEATURES TrenchFET® Power
MOSFET AEC-Q101 Qualifiedd
100 % Rg and UIS Tested
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
3.30 mm
S 1S
3.30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Part Marking Code: Q017
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G
S N-Channel
MOSFET
PowerPAK 1212-8 SQS482EN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 30 ± 20 16 16 16 64 31 48 62 20
- 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mountc
RthJA
81
°C/W
RthJC
2.4
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ong...